MCH6444
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
35
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
1.2
1.7
75
2.6
98
V
S
m Ω
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=0.75A, VGS=4.5V
ID=0.75A, VGS=4V
VDS=20V, f=1MHz
See speci ? ed Test Circuit.
VDS=20V, VGS=10V, ID=2.5A
IS=2.5A, VGS=0V
118
143
186
36
22
4.2
4.7
15
5.7
4
0.9
0.7
0.86
166
201
1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
10V
0V
VIN
VIN
VDD=15V
ID=1.5A
RL=10 Ω
PW=10 μ s
D.C. ≤ 1%
G
D
VOUT
P.G
50 Ω
S
MCH6444
Ordering Information
Device
MCH6444-TL-H
Package
MCPH6
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No.8935-2/7
相关PDF资料
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相关代理商/技术参数
MCH6445 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6445-TL-E 功能描述:MOSFET N-CH 60V 4A MCPH6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
MCH6445-TL-W 制造商:ON Semiconductor 功能描述:NCH 4A 60V 4V DRIVE MCPH6 - Tape and Reel
MCH6448 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET Low-Voltage Driver Switching Device Applications
MCH6448_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low-Voltage Driver Switching Device Applications
MCH6448-TL-H 功能描述:MOSFET NCH 1.2V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH6534 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Switching, Driver Applications
MCH6534-TL-E 功能描述:两极晶体管 - BJT BIP NPN+NPN 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2